Ion Implanter
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IBS provides unique ion implanter solutions to service semiconductor device manufacturing and development customers. Our focus is to answer new and futures needs in niche and fast growing markets as SiC, H-Cut, III/V and to provide solutions to replace obsolete equipment for mature markets.
Our family of products consists in:
FLEXion**: Medium Current ion implanter platform for 4"-8" wafers, offering optimized process window, high energy up to 400keV and enhanced productivity for SiC and other III/V applications;
MAXion**: High Current ion implanter platform for 4"-8" wafers, offering high energy capability up to 210keV, and enhanced productivity for H-Cut applications as well as mature Si device doping;
PULSion**: A Plasma Immersion Ion Implanter (PIII) platform for up to 12" wafers, offering very low energy, very high dose and 3D doping capabilities, for shallow doping, material modifications and trench/fin doping applications
IMC**: Fully customizable Ion Implanter for R&D, process development, or low volume production for up to 6" wafers (8" as option).
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Price Available on Request